Invention Grant
US09076509B2 Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices
有权
使用不对称双栅极器件中二极管电压的独立控制来改变电源电压或参考电压的方法和装置
- Patent Title: Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices
- Patent Title (中): 使用不对称双栅极器件中二极管电压的独立控制来改变电源电压或参考电压的方法和装置
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Application No.: US12511666Application Date: 2009-07-29
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Publication No.: US09076509B2Publication Date: 2015-07-07
- Inventor: Ching-Te Kent Chuang , Keunwoo Kim , Jente Benedict Kuang , Hung Cai Ngo , Kevin John Nowka
- Applicant: Ching-Te Kent Chuang , Keunwoo Kim , Jente Benedict Kuang , Hung Cai Ngo , Kevin John Nowka
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/14 ; G11C11/412 ; G11C11/417

Abstract:
Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.
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