Invention Grant
- Patent Title: Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
- Patent Title (中): 基于存储单元阈值电压分布动态调整读取电压电平
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Application No.: US13743563Application Date: 2013-01-17
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Publication No.: US09076545B2Publication Date: 2015-07-07
- Inventor: Nima Mokhlesi
- Applicant: SANDISK TECNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECNOLOGIES INC.
- Current Assignee: SANDISK TECNOLOGIES INC.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/26 ; G11C11/56 ; G11C16/28
Abstract:
A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.
Public/Granted literature
- US20140198567A1 DYNAMIC ADJUSTMENT OF READ VOLTAGE LEVELS BASED ON MEMORY CELL THRESHOLD VOLTAGE DISTRIBUTION Public/Granted day:2014-07-17
Information query
