Invention Grant
US09076547B2 Level compensation in multilevel memory 有权
多级存储器中的电平补偿

Level compensation in multilevel memory
Abstract:
Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.
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