Invention Grant
- Patent Title: Level compensation in multilevel memory
- Patent Title (中): 多级存储器中的电平补偿
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Application No.: US13563283Application Date: 2012-07-31
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Publication No.: US09076547B2Publication Date: 2015-07-07
- Inventor: Violante Moschiano , Walter Di Francesco
- Applicant: Violante Moschiano , Walter Di Francesco
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C11/56

Abstract:
Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.
Public/Granted literature
- US20130265827A1 LEVEL COMPENSATION IN MULTILEVEL MEMORY Public/Granted day:2013-10-10
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