A device includes a substrate and a dual port static random access memory cell. The substrate includes an N-well region, a first P-well region and a second P-well region. The first and second P-well regions are arranged on opposite sides of the N-well region and spaced apart along a width direction. The static random access memory cell includes first and second pull-up transistors that are provided in the N-well region, a first pair of pull-down transistors and a first pair of access transistors provided in the first P-well region, and a second pair of pull-down transistors and a second pair of access transistors provided in the second P-well region. Each of the first pair and the second pair of pull-down transistors includes a first pull-down transistor and a second pull-down transistor. Active regions of the first pull-down transistor and the second pull-down transistor are spaced apart along the width direction.