Invention Grant
- Patent Title: Substrate processing apparatus, substrate supporter and method of manufacturing semiconductor device
- Patent Title (中): 基板加工装置，基板支撑体及半导体装置的制造方法
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Application No.: US13980144Application Date: 2012-01-16
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Publication No.: US09076644B2Publication Date: 2015-07-07
- Inventor: Masakazu Sakata , Hidehiro Yanai
- Applicant: Masakazu Sakata , Hidehiro Yanai
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-007884 20110118
- International Application: PCT/JP2012/050729 WO 20120116
- International Announcement: WO2012/099064 WO 20120726
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/02 ; H01L21/67 ; H01L21/677 ; H01L21/687
Abstract:
A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.
Public/Granted literature
- US20140004710A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE SUPPORTER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
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