Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13552345Application Date: 2012-07-18
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Publication No.: US09076654B2Publication Date: 2015-07-07
- Inventor: Mototsugu Okushima
- Applicant: Mototsugu Okushima
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-172562 20090723
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02

Abstract:
A semiconductor device has: a power supply line; a ground line; a signal line for transmitting a signal; a signal pad connected to the signal line; a protection element connected between the signal line and the ground line; and a trigger circuit configured to supply a trigger current to the protection element. The trigger circuit has: a PMOS transistor whose gate and backgate are connected to the power supply line and whose source is connected to the protection element; and an amplifier circuit part configured to amplify a first current flowing through the PMOS transistor to generate a second current. The trigger current includes the second current.
Public/Granted literature
- US20120281324A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-11-08
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