A semiconductor device has at least a first capacitor and a second capacitor. First electrodes of the first and second capacitors are connected in common, a first voltage (½ VPERI) is applied to the first electrodes, a second voltage (for example, VPERI) that is different from the first voltage is applied to either one of the second electrodes, and the first voltage is applied to the other second electrode. A capacitor which constitutes a dummy capacitance is provided by applying one of the second electrodes of the first and second capacitors with the same voltage as the voltage applied to their first electrodes, whereby making it possible to increase the area of the compensation capacitance in the semiconductor device without changing a specified capacitance value.