Invention Grant
US09076680B2 Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
有权
集成电路，形成电容器的方法，以及形成集成电路的方法，该集成电路包括阵列阵列的电容器和电路
- Patent Title: Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
- Patent Title (中): 集成电路，形成电容器的方法，以及形成集成电路的方法，该集成电路包括阵列阵列的电容器和电路
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Application No.: US13276125Application Date: 2011-10-18
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Publication No.: US09076680B2Publication Date: 2015-07-07
- Inventor: Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
- Applicant: Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L27/108 ; H01L49/02
Abstract:
A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
Public/Granted literature
Information query
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