Invention Grant
- Patent Title: Image sensor based on depth pixel structure
- Patent Title (中): 基于深度像素结构的图像传感器
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Application No.: US13343976Application Date: 2012-01-05
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Publication No.: US09076706B2Publication Date: 2015-07-07
- Inventor: Seong Jin Kim , Sang Wook Han , Albert Theuwissen
- Applicant: Seong Jin Kim , Sang Wook Han , Albert Theuwissen
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0001758 20110107; KR10-2011-0146125 20111229
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An image sensor based on a depth pixel structure is provided. The image sensor may include a pixel including a photodiode, and the photodiode may include a transfer gate to transfer, to a floating diffusion node, an electron generated by a light reflected from an object.
Public/Granted literature
- US20120175685A1 IMAGE SENSOR BASED ON DEPTH PIXEL STRUCTURE Public/Granted day:2012-07-12
Information query
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