Invention Grant
US09076718B2 Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
有权
氧化物半导体，薄膜晶体管阵列基板及其制造方法以及显示装置
- Patent Title: Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
- Patent Title (中): 氧化物半导体，薄膜晶体管阵列基板及其制造方法以及显示装置
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Application No.: US14478055Application Date: 2014-09-05
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Publication No.: US09076718B2Publication Date: 2015-07-07
- Inventor: Yoshifumi Ohta , Go Mori , Hirohiko Nishiki , Yoshimasa Chikama , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Takeshi Hara
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2009-154104 20090629
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/00 ; H01L29/22 ; H01L29/45 ; H01L29/49 ; H01L29/66 ; H01L29/786 ; G02F1/1368 ; H01L21/02
Abstract:
The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.
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