A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction, and a lower end of the second interconnection being located above the first interconnection; a plurality of third interconnections extending in a third direction, and the third interconnections being arranged in the second direction; a current limitation layer provided between the second interconnection and the third interconnections; a metal ion source layer provided between the current limitation layer and the third interconnections; a resistance change layer provided between the current limitation layer and the third interconnections; and a selector provided between the first interconnection and the lower end of the second interconnection.