Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14246249Application Date: 2014-04-07
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Publication No.: US09076725B2Publication Date: 2015-07-07
- Inventor: Yasushi Niimura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2013-080337 20130408; JP2013-088295 20130419; JP2014-031306 20140221
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/78 ; H01L21/301 ; H01L21/263 ; H01L21/28 ; H01L21/66

Abstract:
A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations.
Public/Granted literature
- US20140302621A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2014-10-09
Information query
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