Invention Grant
- Patent Title: Tunneling transistor with asymmetric gate
- Patent Title (中): 具有不对称栅极的隧道晶体管
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Application No.: US14052083Application Date: 2013-10-11
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Publication No.: US09076764B2Publication Date: 2015-07-07
- Inventor: Yung-Chun Wu , Yi-Ruei Jhan
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW102125351A 20130716
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/739 ; H01L29/06
Abstract:
An asymmetric gate tunneling transistor includes a substrate, a first-polarity portion, a second-polarity portion, a channel portion, a gate structure and an insulation body. The first-polarity portion and the second-polarity portion are disposed on the substrate. The channel portion is connected with the first-polarity portion and the second-polarity portion, and includes a first section and a second section. The gate structure includes an enveloping portion surrounding the first section, and a flat portion covering one side of the second section away from the substrate. The insulation body includes a first insulation portion disposed between the first section and the enveloping portion, and a second insulation portion disposed between the second section and the flat portion. Through the asymmetric design of the gate structure, the tunneling transistor is offered with features of a high ON current and a low OFF current.
Public/Granted literature
- US20150021654A1 TUNNELING TRANSISTOR WITH ASYMMETRIC GATE Public/Granted day:2015-01-22
Information query
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