Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device
- Patent Title (中): 半导体器件和半导体器件的制造方法
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Application No.: US14494010Application Date: 2014-09-23
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Publication No.: US09076777B2Publication Date: 2015-07-07
- Inventor: Yoshiharu Kaneda , Naoko Taniguchi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-197142 20120907
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
A semiconductor device includes a die pad, which includes an upper surface and a lower surface, the upper surface forming a rectangular shape in plan view; a plurality of support pins that support the die pad; a plurality of inner leads arranged around the die pad; a plurality of outer leads connected to each of the inner leads; a semiconductor chip which includes a main surface and a back surface and in which a plurality of electrode pads is formed in the main surface; a plurality of wires which electrically couple the electrode pads of the semiconductor chip to the inner leads respectively; and a sealing body that seals the support pins, the inner leads, the semiconductor chip, and the wires. A first support pin of the plurality of support pins is integrally formed together with the die pad. The first support pin is terminated inside the sealing body.
Public/Granted literature
- US20150008569A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2015-01-08
Information query
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