Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14118112Application Date: 2012-06-14
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Publication No.: US09076782B2Publication Date: 2015-07-07
- Inventor: Shin Soyano
- Applicant: Shin Soyano
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2011-174540 20110810
- International Application: PCT/JP2012/065224 WO 20120614
- International Announcement: WO2013/021726 WO 20130214
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L25/07 ; H01L23/373 ; H01L23/498 ; H01L23/31 ; H01L25/18 ; H01L23/24

Abstract:
A semiconductor device has a plurality of electronic components mounted on an insulating substrate formed with a metal layer, and electrically connected to each other or to the metal layer; a positioning wire member having a predetermined diameter and a predetermined length, and bonded to each of the plurality of electronic components or to the metal layer; a lead frame disposed to bridge and electrically connect the plurality of electronic components to each other or between the metal layer and the electronic components; and an opening having a size capable of inserting the wire member therethrough formed to penetrate through the lead frame, to join the lead frame to each of the electronic components or the metal layer at a predetermined position therein. The lead frame is positioned on the insulating substrate by inserting the wire member into the opening.
Public/Granted literature
- US20140084438A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2014-03-27
Information query
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