Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13669670Application Date: 2012-11-06
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Publication No.: US09076793B2Publication Date: 2015-07-07
- Inventor: Katsuhiko Tanaka
- Applicant: PS4 LUXCO S.A.R.L.
- Applicant Address: LU Luxembourg
- Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-277346 20111219
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L21/285 ; H01L21/768
Abstract:
In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film.
Public/Granted literature
- US20130154096A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-06-20
Information query
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