Invention Grant
- Patent Title: Spacer for thermal plate in semiconductor processing
- Patent Title (中): 半导体加工中的热板隔板
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Application No.: US13629634Application Date: 2012-09-28
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Publication No.: US09076834B2Publication Date: 2015-07-07
- Inventor: Yong-An Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: B23Q3/00
- IPC: B23Q3/00 ; H01L21/687 ; B27B17/00 ; B25H1/00
Abstract:
A spacer for a thermal plate in semiconductor processing includes a base substrate having a top surface defined thereon, a wafer having a bottom surface covering a portion of the base substrate, and a plurality of air passages formed in between the bottom surface of the wafer and the base substrate. The air passages connect the bottom surface of the wafer to an ambience.
Public/Granted literature
- US20140091512A1 SPACER FOR THERMAL PLATE IN SEMICONDUCTOR PROCESSING Public/Granted day:2014-04-03
Information query
IPC分类:
