Invention Grant
- Patent Title: Method for producing ultra-thin tungsten layers with improved step coverage
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Application No.: US13633502Application Date: 2012-10-02
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Publication No.: US09076843B2Publication Date: 2015-07-07
- Inventor: Sang-Hyeob Lee , Joshua Collins
- Applicant: Novellus Systems, Inc.
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/52 ; C23C16/02 ; C23C16/04 ; C23C16/14 ; C23C16/455 ; H01L21/285
Abstract:
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
Public/Granted literature
- US20130168864A1 METHOD FOR PRODUCING ULTRA-THIN TUNGSTEN LAYERS WITH IMPROVED STEP COVERAGE Public/Granted day:2013-07-04
Information query
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