Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14156187Application Date: 2014-01-15
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Publication No.: US09076866B2Publication Date: 2015-07-07
- Inventor: Jun Kyo Suh
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0115012 20130927
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L29/78 ; H01L29/66 ; H01L21/768 ; H01L29/417 ; H01L21/265
Abstract:
A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a top surface of the pillar, a salicide layer formed to cover the top surface of the pillar and surround an upper portion of the pillar, and an electrode formed to cover a top surface and a lateral surface of the salicide layer.
Public/Granted literature
- US20150091081A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-04-02
Information query
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