Invention Grant
- Patent Title: Nitride semiconductor structure and semiconductor light emitting device including the same
- Patent Title (中): 氮化物半导体结构和包括其的半导体发光器件
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Application No.: US13963109Application Date: 2013-08-09
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Publication No.: US09076912B2Publication Date: 2015-07-07
- Inventor: Yen-Lin Lai , Shen-Jie Wang
- Applicant: GENESIS PHOTONICS INC.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: Jianq Chyun IP Office
- Priority: TW101143101A 20121119
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/06 ; H01L33/32
Abstract:
A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0
Public/Granted literature
- US20140138617A1 NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME Public/Granted day:2014-05-22
Information query
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