Invention Grant
- Patent Title: Dark current reduction for large area photodiodes
- Patent Title (中): 大面积光电二极管的暗电流降低
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Application No.: US12505712Application Date: 2009-07-20
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Publication No.: US09076921B2Publication Date: 2015-07-07
- Inventor: Jurgen Michel
- Applicant: Jurgen Michel
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L21/20 ; H01L31/0232 ; H01L31/18 ; H01L27/146 ; H01L31/103 ; H01L31/109
Abstract:
A method of fabricating a large area photodiode is provided. The method includes providing a substrate having a first contact layer formed thereon. Also, the method includes forming a dielectric layer on the first contact layer and patterning selective areas of the dielectric layer to form a plurality of dielectric windows. Each of the dielectric windows has an open region exposing the first contact layer. Furthermore, the method includes epitaxially growing photodiode material(s) in the dielectric windows, wherein each of the dielectric windows are individualized photodiode structures.
Public/Granted literature
- US20100012973A1 DARK CURRENT REDUCTION FOR LARGE AREA PHOTODIODES Public/Granted day:2010-01-21
Information query
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