Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13906044Application Date: 2013-05-30
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Publication No.: US09076928B2Publication Date: 2015-07-07
- Inventor: Seong Seok Yang , Ki Seok Kim , Je Won Kim , Ju Bin Seo , Sang Seok Lee , Joon Sub Lee , Jin Bock Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0057550 20120530
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/36 ; H01L33/02 ; H01L27/15

Abstract:
A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
Public/Granted literature
- US20130320351A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-12-05
Information query
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