Invention Grant
US09076928B2 Semiconductor light emitting device and method for manufacturing the same 有权
半导体发光器件及其制造方法

Semiconductor light emitting device and method for manufacturing the same
Abstract:
A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
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