Invention Grant
- Patent Title: Method of producing at least one optoelectronic semiconductor chip
- Patent Title (中): 生产至少一个光电半导体芯片的方法
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Application No.: US14004442Application Date: 2012-03-12
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Publication No.: US09076941B2Publication Date: 2015-07-07
- Inventor: Siegfried Herrmann , Stefan Illek
- Applicant: Siegfried Herrmann , Stefan Illek
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102011013821 20110314
- International Application: PCT/EP2012/054270 WO 20120312
- International Announcement: WO2012/123410 WO 20120920
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/62 ; H01L33/58 ; H01L33/44 ; H01L23/00 ; H01L33/00 ; H01L33/22 ; H01L33/38 ; H01L33/46 ; H01S5/02 ; H01S5/022 ; H01S5/323

Abstract:
A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.
Public/Granted literature
- US20140051194A1 METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2014-02-20
Information query
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