Invention Grant
US09078373B1 Integrated circuit structures having off-axis in-hole capacitor and methods of forming
有权
具有离轴孔隙电容器的集成电路结构及其形成方法
- Patent Title: Integrated circuit structures having off-axis in-hole capacitor and methods of forming
- Patent Title (中): 具有离轴孔隙电容器的集成电路结构及其形成方法
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Application No.: US14147225Application Date: 2014-01-03
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Publication No.: US09078373B1Publication Date: 2015-07-07
- Inventor: Mark C. Lamorey , Janak G. Patel , Peter Slota, Jr. , David B. Stone
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H05K1/02 ; H05K3/30

Abstract:
Various embodiments include integrated circuit structures having an off-axis in-hole capacitor. In some embodiments, an integrated circuit (IC) structure includes: a substrate layer having an upper surface; an IC chip at least partially contained within the substrate layer and aligned with a minor axis perpendicular to the upper surface of the substrate layer; an aperture in the substrate layer, the aperture physically separated from the IC chip; and a capacitor in the aperture and at least partially contained within the substrate layer, the capacitor being physically isolated from the IC chip, wherein the capacitor is aligned with an axis perpendicular to the upper surface of the substrate layer and offset from the minor axis of the IC chip.
Public/Granted literature
- US20150195914A1 INTEGRATED CIRCUIT STRUCTURES HAVING OFF-AXIS IN-HOLE CAPACITOR AND METHODS OF FORMING Public/Granted day:2015-07-09
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