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US09078373B1 Integrated circuit structures having off-axis in-hole capacitor and methods of forming 有权
具有离轴孔隙电容器的集成电路结构及其形成方法

Integrated circuit structures having off-axis in-hole capacitor and methods of forming
Abstract:
Various embodiments include integrated circuit structures having an off-axis in-hole capacitor. In some embodiments, an integrated circuit (IC) structure includes: a substrate layer having an upper surface; an IC chip at least partially contained within the substrate layer and aligned with a minor axis perpendicular to the upper surface of the substrate layer; an aperture in the substrate layer, the aperture physically separated from the IC chip; and a capacitor in the aperture and at least partially contained within the substrate layer, the capacitor being physically isolated from the IC chip, wherein the capacitor is aligned with an axis perpendicular to the upper surface of the substrate layer and offset from the minor axis of the IC chip.
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