Invention Grant
- Patent Title: Semiconductor memory device and method of operating the same
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US13601448Application Date: 2012-08-31
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Publication No.: US09082503B2Publication Date: 2015-07-14
- Inventor: Do Young Kim
- Applicant: Do Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0063199 20120613
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34

Abstract:
The present disclosure relates to a semiconductor device and a method of operating the semiconductor device, and particularly to a semiconductor memory device including a memory cell array and a method of operating the semiconductor memory device. The memory device includes a memory cell array including a plurality of memory cells; and a peripheral circuit configured to program a selected memory cell into a target program state, wherein the peripheral circuit performs a program operation by applying a bit line voltage determined according to the threshold voltage to a bit line of the selected memory cell when a threshold voltage of the selected memory cell is higher than a first verification voltage and is lower than a second verification voltage.
Public/Granted literature
- US20130336069A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2013-12-19
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