Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14203296Application Date: 2014-03-10
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Publication No.: US09082508B2Publication Date: 2015-07-14
- Inventor: Masahiro Mitsuyasu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2013-180195 20130830
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; G11C11/417

Abstract:
In one embodiment, a semiconductor device includes a substrate, and one or more logic circuit regions disposed on the substrate, and including a plurality of logic circuit elements. The device further includes a memory region disposed on the substrate, including a plurality of memory cells, and having a shape to surround each of the one or more logic circuit regions.
Public/Granted literature
- US20150063006A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
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