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US09082510B2 Non-volatile memory (NVM) with adaptive write operations 有权
具有自适应写入操作的非易失性存储器(NVM)

Non-volatile memory (NVM) with adaptive write operations
Abstract:
A method of performing a write operation on memory cells of a memory array includes applying a first plurality of pulses the write operation on the memory cells in accordance with a first predetermined ramp rate, wherein the first plurality of pulses is a predetermined number of pulses; performing a comparison of a threshold voltage of a subset of the memory cells with an interim verify voltage; and if a threshold voltage of any of the subset of memory cells fails the comparison with the interim verify voltage, continuing the write operation by applying a second plurality of pulses on the memory cells in accordance with a second predetermined ramp rate which has an increased ramp rate as compared to the first predetermined ramp rate.
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