Invention Grant
- Patent Title: Non-volatile memory (NVM) with adaptive write operations
- Patent Title (中): 具有自适应写入操作的非易失性存储器(NVM)
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Application No.: US13616169Application Date: 2012-09-14
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Publication No.: US09082510B2Publication Date: 2015-07-14
- Inventor: Chen He , Richard K. Eguchi
- Applicant: Chen He , Richard K. Eguchi
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56

Abstract:
A method of performing a write operation on memory cells of a memory array includes applying a first plurality of pulses the write operation on the memory cells in accordance with a first predetermined ramp rate, wherein the first plurality of pulses is a predetermined number of pulses; performing a comparison of a threshold voltage of a subset of the memory cells with an interim verify voltage; and if a threshold voltage of any of the subset of memory cells fails the comparison with the interim verify voltage, continuing the write operation by applying a second plurality of pulses on the memory cells in accordance with a second predetermined ramp rate which has an increased ramp rate as compared to the first predetermined ramp rate.
Public/Granted literature
- US20140078829A1 NON-VOLATILE MEMORY (NVM) WITH ADAPTIVE WRITE OPERATIONS Public/Granted day:2014-03-20
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