Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14043908Application Date: 2013-10-02
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Publication No.: US09082642B2Publication Date: 2015-07-14
- Inventor: Hyun Sub Kim , Jung Won Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0067297 20130612
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/12 ; H01L27/105 ; H01L27/088 ; G11C8/08 ; H01L27/02 ; H01L27/115
Abstract:
Disclosed is a semiconductor device, including: an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, in which the first to fourth transistors share one junction area.
Public/Granted literature
- US20140369121A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-18
Information query
