A method of removing a plurality of semiconductor device layers from an underlying base substrate. A multilayered stack including alternating layers of sacrificial material layers and semiconductor material layers is formed on a base substrate. Each successive sacrificial material layer that is formed is thicker than the previously formed sacrificial material layer. An etch is then performed that first removes the thickest sacrificial material layer of the multilayered stack. The uppermost semiconductor device layer within the multilayered stack is accordingly first released. As the etch continues, the other sacrificial material layers are removed sequentially, in the order of decreasing thickness, and the other semiconductor device layers are removed sequentially.