Invention Grant
- Patent Title: Variable resistive memory device including vertical channel PMOS transistor and method of manufacturing the same
-
Application No.: US14076921Application Date: 2013-11-11
-
Publication No.: US09082697B2Publication Date: 2015-07-14
- Inventor: Nam Kyun Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0097818 20130819
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/24 ; H01L29/66 ; H01L29/78 ; H01L27/22
Abstract:
A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar. The inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar.
Public/Granted literature
Information query
IPC分类:
