Invention Grant
- Patent Title: Metal layer end-cut flow
- Patent Title (中): 金属层终端流
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Application No.: US14018706Application Date: 2013-09-05
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Publication No.: US09082830B2Publication Date: 2015-07-14
- Inventor: Cheng-Hao Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/768 ; H01L21/311
Abstract:
A method of patterning a metal layer is disclosed. The method includes providing a substrate and forming a material layer over the substrate. The method includes forming a second material layer over the first material layer. The method includes performing a first patterning process to the second material layer to form a trench in the second material layer. The first patterning process defines a width size of the trench, the width size being measured in a first direction. The method includes performing a second patterning process to the trench to transform the trench. The second patterning process defines a length size of the transformed trench. The length size is measured in a second direction different from the first direction. The method also includes filling the transformed trench with a conductive material.
Public/Granted literature
- US20140011351A1 Metal Layer End-Cut Flow Public/Granted day:2014-01-09
Information query
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