Invention Grant
- Patent Title: Semiconductor device and method of forming protection and support structure for conductive interconnect structure
- Patent Title (中): 形成用于导电互连结构的保护和支撑结构的半导体器件和方法
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Application No.: US13478008Application Date: 2012-05-22
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Publication No.: US09082832B2Publication Date: 2015-07-14
- Inventor: Yaojian Lin , Kang Chen , Jianmin Fang
- Applicant: Yaojian Lin , Kang Chen , Jianmin Fang
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/768 ; H01L23/00 ; H01L23/498 ; H01L21/48
Abstract:
A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer.
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