Invention Grant
US09082837B2 Nonvolatile memory bitcell with inlaid high k metal select gate
有权
具有嵌入式高k金属选择栅极的非易失性存储器位单元
- Patent Title: Nonvolatile memory bitcell with inlaid high k metal select gate
- Patent Title (中): 具有嵌入式高k金属选择栅极的非易失性存储器位单元
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Application No.: US13962338Application Date: 2013-08-08
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Publication No.: US09082837B2Publication Date: 2015-07-14
- Inventor: Asanga H. Perera
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L29/788 ; H01L27/115
Abstract:
A process integration is disclosed for fabricating non-volatile memory (NVM) cells having recessed control gates (118, 128) on a first substrate area (111) which are encapsulated in one or more planar dielectric layers (130) prior to forming in-laid high-k metal select gates and CMOS transistor gates (136, 138) in first and second substrate areas (111, 113) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.
Public/Granted literature
- US20150041875A1 Nonvolatile Memory Bitcell With Inlaid High K Metal Select Gate Public/Granted day:2015-02-12
Information query
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