Invention Grant
- Patent Title: Oxide semiconductor composition and manufacturing method thereof, oxide thin film transistor and manufacturing method thereof
- Patent Title (中): 氧化物半导体组合物及其制造方法，氧化物薄膜晶体管及其制造方法
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Application No.: US14109967Application Date: 2013-12-18
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Publication No.: US09082862B2Publication Date: 2015-07-14
- Inventor: Chia-Sheng Hsieh , Jan-Tian Lian , Hung-Yu Wu , Hsin-Min Fu , Jang-Jeng Liang
- Applicant: Chunghwa Picture Tubes, LTD.
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, LTD.
- Current Assignee: Chunghwa Picture Tubes, LTD.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW102139745A 20131101
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/66
Abstract:
An oxide semiconductor composition comprises graphene, a metal oxide precursor, and a solvent. Based on a total weight of the oxide semiconductor composition, a concentration of the graphene is between 0.01 and 10 wt %, a concentration of the metal oxide is between 0.01 and 30 wt %, and a concentration of the solvent is between 60 and 99.98 wt %.
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