Invention Grant
- Patent Title: Method of fabricating a power semiconductor chip package
- Patent Title (中): 制造功率半导体芯片封装的方法
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Application No.: US13935457Application Date: 2013-07-03
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Publication No.: US09082878B2Publication Date: 2015-07-14
- Inventor: Ralf Otremba
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/336 ; H01L23/00 ; H01L23/495 ; H01L29/40 ; H01L29/06 ; H01L29/10 ; H01L29/417 ; H01L29/45 ; H01L29/78
Abstract:
A device includes a vertical power semiconductor chip having an epitaxial layer and a bulk semiconductor layer. A first contact pad is arranged on a first main face of the power semiconductor chip and a second contact pad is arranged on a second main face of the power semiconductor chip opposite to the first main face. The device further comprises an electrically conducting carrier attached to the second contact pad.
Public/Granted literature
- US20130295724A1 Power Semiconductor Chip Package Public/Granted day:2013-11-07
Information query
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