Invention Grant
- Patent Title: Photovoltaic device with a zinc magnesium oxide window layer
- Patent Title (中): 具有锌镁氧化物窗层的光伏器件
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Application No.: US13238457Application Date: 2011-09-21
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Publication No.: US09082903B2Publication Date: 2015-07-14
- Inventor: Rui Shao , Markus Gloeckler
- Applicant: Rui Shao , Markus Gloeckler
- Applicant Address: US OH Perrysburg
- Assignee: FIRST SOLAR, INC.
- Current Assignee: FIRST SOLAR, INC.
- Current Assignee Address: US OH Perrysburg
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0224 ; H01L31/073 ; H01L31/18

Abstract:
Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.
Public/Granted literature
- US20120067421A1 PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER Public/Granted day:2012-03-22
Information query
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