Invention Grant
US09082960B2 Fully compensated synthetic antiferromagnet for spintronics applications
有权
用于自旋电子学应用的全补偿合成反铁磁体
- Patent Title: Fully compensated synthetic antiferromagnet for spintronics applications
- Patent Title (中): 用于自旋电子学应用的全补偿合成反铁磁体
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Application No.: US13863542Application Date: 2013-04-16
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Publication No.: US09082960B2Publication Date: 2015-07-14
- Inventor: Guenole Jan , Ru-Ying Tong
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/02 ; H01L43/12 ; H01F10/30 ; H01F10/32 ; H01L43/08

Abstract:
A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.
Public/Granted literature
- US20140306302A1 Fully Compensated Synthetic Antiferromagnet for Spintronics Applications Public/Granted day:2014-10-16
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