Invention Grant
US09082960B2 Fully compensated synthetic antiferromagnet for spintronics applications 有权
用于自旋电子学应用的全补偿合成反铁磁体

Fully compensated synthetic antiferromagnet for spintronics applications
Abstract:
A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.
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