Invention Grant
- Patent Title: Nonvolatile memory device and method for manufacturing the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US14111846Application Date: 2013-02-13
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Publication No.: US09082971B2Publication Date: 2015-07-14
- Inventor: Satoru Fujii , Takumi Mikawa
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2012-034464 20120220
- International Application: PCT/JP2013/000753 WO 20130213
- International Announcement: WO2013/125172 WO 20130829
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; C23C16/40
Abstract:
A variable resistance layer includes a first variable resistance layer comprising a first metal oxide that is oxygen deficient and a second variable resistance layer comprising a second metal oxide having a degree of oxygen deficiency that is different from that of the first metal oxide, wherein the second variable resistance layer includes a non-metal element A that is different from oxygen, x
Public/Granted literature
- US20140225053A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-08-14
Information query
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