Invention Grant
US09083005B2 Reactor for atomic layer deposition (ALD), application to encapsulation of an OLED device by deposition of a transparent AI2O3 film
有权
用于原子层沉积（ALD）的反应器，用于通过沉积透明Al 2 O 3膜来封装OLED器件
- Patent Title: Reactor for atomic layer deposition (ALD), application to encapsulation of an OLED device by deposition of a transparent AI2O3 film
- Patent Title (中): 用于原子层沉积（ALD）的反应器，用于通过沉积透明Al 2 O 3膜来封装OLED器件
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Application No.: US13869620Application Date: 2013-04-24
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Publication No.: US09083005B2Publication Date: 2015-07-14
- Inventor: Tony Maindron
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Norton Rose Fulbright US LLP
- Priority: FR1253729 20120424
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/56 ; C23C16/455 ; C23C16/40 ; C23C16/44 ; H01L51/52
Abstract:
The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.
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