Invention Grant
- Patent Title: Low voltage high efficiency gallium arsenide power amplifier
- Patent Title (中): 低电压高效砷化镓功率放大器
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Application No.: US13879507Application Date: 2012-08-12
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Publication No.: US09083291B2Publication Date: 2015-07-14
- Inventor: Robert J. Lender, Jr. , Douglas M. Dugas
- Applicant: Robert J. Lender, Jr. , Douglas M. Dugas
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agent Joesph E. Funk; Daniel J. Long
- International Application: PCT/US2012/050499 WO 20120812
- International Announcement: WO2013/066466 WO 20130510
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F3/21 ; H03F3/195 ; H03F3/24

Abstract:
A low voltage, switch mode PHEMT power amplifier with a 0.1 μm gate length and a low loss, lumped element, output matching circuit is disclosed that provides high performance over a frequency range of 1.4 GHz-2.5 GHz. The amplifier makes use of monolithic circuit technology for the first stage and output transistor, and uses a printed circuit board with surface mount components for the output matching network. The power output of the power amplifier is stable over a range of 60 degrees centigrade, has high power efficiencies of 44-53% with greater than 2 watts output power over the frequency range of 1.4 GHz and 2.5 GHz. In addition, through drain voltage control, the output power can be varied over a wide range between about 0.8 to 2.5 watts while still maintaining a high efficiency in the range of 50±3%.
Public/Granted literature
- US20130321087A1 LOW VOLTAGE HIGH EFFICIENCY GALLIUM ARSENIDE POWER AMPLIFIER Public/Granted day:2013-12-05
Information query
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