Invention Grant
- Patent Title: High-frequency module
- Patent Title (中): 高频模块
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Application No.: US12960581Application Date: 2010-12-06
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Publication No.: US09084348B2Publication Date: 2015-07-14
- Inventor: Hisanori Murase , Takanori Uejima
- Applicant: Hisanori Murase , Takanori Uejima
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2009-277133 20091207
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L21/48 ; H01L23/00

Abstract:
A high frequency module includes RF terminal lands at a first layer that is a surface layer of a multilayer substrate on which RF terminal electrodes of a switch IC are mounted that are arranged in a line. Each of the RF terminal lands is electrically connected to one end of a lead electrode at a second layer via a via hole. Some of the lead electrodes extend from corresponding ones of the RF terminal lands in an outward direction away from a side of the switch IC. The remaining ones of the lead electrodes extend from corresponding ones of the RF terminal lands in an inward direction that is opposite to the outward direction.
Public/Granted literature
- US20110133850A1 HIGH-FREQUENCY MODULE Public/Granted day:2011-06-09
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