Invention Grant
US09084348B2 High-frequency module 有权
高频模块

High-frequency module
Abstract:
A high frequency module includes RF terminal lands at a first layer that is a surface layer of a multilayer substrate on which RF terminal electrodes of a switch IC are mounted that are arranged in a line. Each of the RF terminal lands is electrically connected to one end of a lead electrode at a second layer via a via hole. Some of the lead electrodes extend from corresponding ones of the RF terminal lands in an outward direction away from a side of the switch IC. The remaining ones of the lead electrodes extend from corresponding ones of the RF terminal lands in an inward direction that is opposite to the outward direction.
Public/Granted literature
Information query
Patent Agency Ranking
0/0