Invention Grant
- Patent Title: Etching piezoelectric material
- Patent Title (中): 蚀刻压电材料
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Application No.: US12991901Application Date: 2009-05-12
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Publication No.: US09085152B2Publication Date: 2015-07-21
- Inventor: Jeffrey Birkmeyer , Youming Li
- Applicant: Jeffrey Birkmeyer , Youming Li
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Fish & Richardson P.C.
- International Application: PCT/US2009/043631 WO 20090512
- International Announcement: WO2009/142960 WO 20091126
- Main IPC: C23F1/12
- IPC: C23F1/12 ; B41J2/16 ; H01L21/311 ; H01L41/332
Abstract:
Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.
Public/Granted literature
- US20110117311A1 ETCHING PIEZOELECTRIC MATERIAL Public/Granted day:2011-05-19
Information query
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