Invention Grant
US09085462B2 Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
有权
氮化硅粉末的制造方法，氮化硅粉末，氮化硅烧结体和使用其的电路基板
- Patent Title: Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
- Patent Title (中): 氮化硅粉末的制造方法，氮化硅粉末，氮化硅烧结体和使用其的电路基板
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Application No.: US14387281Application Date: 2013-03-25
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Publication No.: US09085462B2Publication Date: 2015-07-21
- Inventor: Koji Shibata , Takuji Ohmaru , Takeshi Yamao , Masataka Fujinaga , Michio Honda , Takayuki Fujii
- Applicant: Ube Industries, Ltd.
- Applicant Address: JP
- Assignee: Ube Industries, Inc.
- Current Assignee: Ube Industries, Inc.
- Current Assignee Address: JP
- Agency: DLA Piper LLP (US)
- Priority: JP2012-074863 20120328; JP2012-251815 20121116
- International Application: PCT/JP2013/058645 WO 20130325
- International Announcement: WO2013/146713 WO 20131003
- Main IPC: C01B33/06
- IPC: C01B33/06 ; C01B21/068 ; C04B35/593
Abstract:
A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
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