Invention Grant
- Patent Title: Manufacturing method of high-purity chloropolysilane
- Patent Title (中): 高纯度氯代聚硅烷的制造方法
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Application No.: US14358538Application Date: 2012-12-06
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Publication No.: US09085465B2Publication Date: 2015-07-21
- Inventor: Kouji Ishikawa , Kanemasa Takashima , Hiromu Taguchi
- Applicant: TOAGOSEI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: TOAGOSEI CO. LTD.
- Current Assignee: TOAGOSEI CO. LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-275163 20111216
- International Application: PCT/JP2012/081672 WO 20121206
- International Announcement: WO2013/089014 WO 20130620
- Main IPC: C01B33/107
- IPC: C01B33/107 ; C01B33/08

Abstract:
A chlorination reaction can be carried out at a relatively low temperature by heating a mixture of granular metallic silicon and metallic copper or a copper compound in an inert atmosphere even when the metallic silicon has a high purity and does not contain aluminum and titanium and that chloropolysilane of high purity can be obtained by further adding metallic silicon as needed after the chlorination reaction is started.
Public/Granted literature
- US20140363362A1 MANUFACTURING METHOD OF HIGH-PURITY CHLOROPOLYSILANE Public/Granted day:2014-12-11
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