Invention Grant
- Patent Title: Magnetic field detection device and current sensor
- Patent Title (中): 磁场检测装置和电流传感器
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Application No.: US13519802Application Date: 2010-12-28
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Publication No.: US09086444B2Publication Date: 2015-07-21
- Inventor: Hiroyoshi Nakajima , Takakazu Imai , Takuya Daigo , Reiji Okuno , Junya Fukuda
- Applicant: Hiroyoshi Nakajima , Takakazu Imai , Takuya Daigo , Reiji Okuno , Junya Fukuda
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-297648 20091228
- International Application: PCT/JP2010/073753 WO 20101228
- International Announcement: WO2011/081197 WO 20110707
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/09 ; B82Y25/00 ; G01R15/20

Abstract:
Provided is a magnetic field detection device and a current sensor capable of increasing the degree of freedom in selecting the type of the magnetic field detection element.A magnetic field detection device 1 includes a conductor 3 that generates a magnetic field; a C core 2 provided so as to surround the conductor 3; and a magnetic field detection element 4 that detects a magnetic field. The C core 2 has a gap G1, and the magnetic field detection element 4 is disposed at a position where the magnetic field generated from the conductor 3 can be detected, the position being outside the gap G1. Since the direction of the magnetic flux varies outside of the gap G1 from place to place, the direction of the magnetic flux that passes through the magnetic field detection element 4 can be arbitrarily selected by arbitrarily selecting the installation location of the magnetic field detection element 4. Therefore, the degree of freedom in selecting the type of the magnetic field detection element 4 is increased.
Public/Granted literature
- US20120293170A1 MAGNETIC FIELD DETECTION DEVICE AND CURRENT SENSOR Public/Granted day:2012-11-22
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