Invention Grant
- Patent Title: Low supply voltage bandgap reference circuit and method
- Patent Title (中): 低电压带隙参考电路和方法
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Application No.: US13783423Application Date: 2013-03-04
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Publication No.: US09086706B2Publication Date: 2015-07-21
- Inventor: Chi Fung Lok , Le Feng Shen
- Applicant: Hong Kong Applied Science and Technology Research Institute Company Limited
- Applicant Address: CN Hong Kong Science Park, Shatin, New Territories, Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee Address: CN Hong Kong Science Park, Shatin, New Territories, Hong Kong
- Agency: Ella Cheong Hong Kong
- Agent Sam T. Yip
- Main IPC: G05F3/20
- IPC: G05F3/20 ; G05F3/02
Abstract:
A circuit and method for a bandgap voltage reference operating at 1 volt or below is disclosed, wherein the operational amplifier (A1) drives resistors (R2, R3) only so that both the flicker noise contribution and the process sensitivity due to the conventional metal oxide semiconductor (MOS) devices used as a current mirror within the proportional-to-absolute-temperature (PTAT) loop are eliminated. Two symmetric resistive divider pairs formed by (R1A/R1B, R2A/R2B) are inserted to scale down both the base-emitter voltages (VEB1, VEB2) of bipolar transistors (Q1, Q2) and the PTAT current (IPTAT) so that an output reference voltage (VREF) becomes scalable. Proper bias currents through transistors (M3, M4), which are used to bias (Q1, Q2) and (R1A/R1B, R2A/R2B) respectively, are produced by an additional V-I converter (319) using VREF itself, resulting in a final process, voltage and temperature (PVT) insensitive output reference voltage.
Public/Granted literature
- US20140247034A1 LOW SUPPLY VOLTAGE BANDGAP REFERENCE CIRCUIT AND METHOD Public/Granted day:2014-09-04
Information query
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