Invention Grant
US09086996B2 Nonvolatile memory, reading method of nonvolatile memory, and memory system including nonvolatile memory
有权
非易失性存储器,非易失性存储器的读取方法和包括非易失性存储器的存储器系统
- Patent Title: Nonvolatile memory, reading method of nonvolatile memory, and memory system including nonvolatile memory
- Patent Title (中): 非易失性存储器,非易失性存储器的读取方法和包括非易失性存储器的存储器系统
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Application No.: US13941568Application Date: 2013-07-15
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Publication No.: US09086996B2Publication Date: 2015-07-21
- Inventor: Seungjae Lee , Jinyub Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0078838 20120719
- Main IPC: G06F21/78
- IPC: G06F21/78 ; G06F12/14 ; G06F21/79

Abstract:
A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.
Public/Granted literature
- US20140026232A1 NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY Public/Granted day:2014-01-23
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