Invention Grant
- Patent Title: Determining proximity effect parameters for non-rectangular semiconductor structures
- Patent Title (中): 确定非矩形半导体结构的邻近效应参数
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Application No.: US12909506Application Date: 2010-10-21
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Publication No.: US09087173B2Publication Date: 2015-07-21
- Inventor: Kuen-Yu Tsai , Meng-Fu You , Yi-Chang Lu
- Applicant: Kuen-Yu Tsai , Meng-Fu You , Yi-Chang Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/10
- IPC: G06F17/10 ; G06F17/50
Abstract:
The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related edge effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.
Public/Granted literature
- US20110178778A1 DETERMINING PROXIMITY EFFECT PARAMETERS FOR NON-RECTANGULAR SEMICONDUCTOR STRUCTURES Public/Granted day:2011-07-21
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