Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13965385Application Date: 2013-08-13
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Publication No.: US09087283B2Publication Date: 2015-07-21
- Inventor: Takanori Matsuzaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-012050 20090122
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H03K19/00 ; G06K19/073 ; G11C11/412 ; H03K17/30

Abstract:
A semiconductor device which stores data, and in which refresh operation is not needed, is described. The semiconductor device comprises at least a transistor and a capacitor. A first electrode of the capacitor is connected to a reference voltage terminal and a second electrode of the capacitor is connected to one of a source and a drain of the transistor. The semiconductor device is configured to put, when necessary, the other of the source and the drain of the transistor to the same potential as the one of the source and the drain, so that charge accumulated in the capacitor, which is connected to the one of the source and the drain of the transistor, does not leak through the transistor.
Public/Granted literature
- US20140008445A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-01-09
Information query
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