Invention Grant
- Patent Title: Memory sense amplifier voltage modulation
- Patent Title (中): 存储读出放大器电压调制
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Application No.: US13728749Application Date: 2012-12-27
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Publication No.: US09087559B2Publication Date: 2015-07-21
- Inventor: Andre Schaefér
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C11/4074 ; G11C11/4091

Abstract:
Memory sense amplifier voltage modulation. An embodiment of a an apparatus includes a memory including a sense amplifier; a first node for an high voltage rail for the sense amplifier and a second node for a low voltage rail for the sense amplifier; one or more elements to provide a first voltage to the first node and a second voltage to the second node; and a voltage control engine to control the one or more elements, where the voltage control engine is to independently set a value of the first voltage and a value of the second voltage over time.
Public/Granted literature
- US20140185392A1 MEMORY SENSE AMPLIFIER VOLTAGE MODULATION Public/Granted day:2014-07-03
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